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| JMnic Product Specification Silicon PNP Power Transistors 2SA766 DESCRIPTION With TO-66 package High power dissipation Complement to type 2SC1450 APPLICATIONS Line-operated vertical deflection output Medium power amplifier PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TCU 80ae Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -5 -0.4 -1.2 20 150 -65~150 ae ae UNIT V V V A A W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.2A ;L=25mH,RBE=5k| IE=-1mA ;IC=0 IC=-1A; IB=-0.1A IC=-0.1A ; VCE=-5V IC=-0.5A ; VCE=-5V VCB=-60V; IE=0 IC=-0.1A ; VCE=-5V IC=-0.5A ; VCE=-5V IE=0.1A ; VCB=-10V 35 35 15 MIN -150 -5 TYP. 2SA766 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE-1 VBE-2 ICBO hFE-1 hFE-2 fT MAX UNIT V V -1.0 -0.8 -1.0 -30 150 |I V V V A MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA766 Fig.2 outline dimensions 3 |
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